METHOD OF MANUFACTURING THIN FILM TRANSISTOR

PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor capable of preventing an arc formation during crystallization of an amorphous silicon layer with conducting heat of a metal layer.SOLUTION: Provided is a method of manufacturing a thin film transistor comprising: a substrate including a pixel portion and an interconnection portion; a buffer layer located on the substrate; a gate electrode and a gate interconnection that are located on the buffer layer, with the gate electrode at the pixel portion and the gate interconnection at the interconnection portion; a gate insulating layer located over the whole substrate; a semiconductor layer located on the gate electrode; source and drain electrodes electrically connected to the semiconductor layer, and a metal pattern located on the gate interconnection.