CAPACITIVE MICRO-ELECTRO-MECHANICAL SENSOR WITH SINGLE CRYSTAL SILICON ELECTRODE
PROBLEM TO BE SOLVED: To provide capacitive sensors with single crystal silicon on all key stress points.SOLUTION: Isolating trenches are formed by trench and refill forming dielectrically isolated conductive silicon electrodes for drive, sense and guards. For pressure sensing devices, a pressure po...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | PROBLEM TO BE SOLVED: To provide capacitive sensors with single crystal silicon on all key stress points.SOLUTION: Isolating trenches are formed by trench and refill forming dielectrically isolated conductive silicon electrodes for drive, sense and guards. For pressure sensing devices, a pressure port is opposed to the electrical wire bond pads for ease of packaging. Dual-axis accelerometers measuring in-plane acceleration and out-of-plane acceleration are also described. A third in-plane axis can easily be obtained by duplicating an accelerometer that is rotated 90 degrees around the out-of-plane axis. Creation of resonant structures, angular rate sensors, bolometers, and many other structures are possible with this process technology. Key advantages are hermeticity, vertical vias, vertical and horizontal gap capability, single crystal materials, wafer level packaging, small size, high performance and low cost. |
---|