SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND CONNECTION MATERIAL

PROBLEM TO BE SOLVED: To provide a highly reliable power semiconductor module which greatly inhibits breaking caused by generation of voids when an Sn-Ag-based or Sn-Cu-based lead-free solder is used at a semiconductor element bonded part of the power semiconductor module, by causing most of the Sn-based solder to form an intermetallic compound to have a high melting point; and which achieves stabilization of an operation under a high temperature environment and obtains resistance against a high current load.SOLUTION: In a power semiconductor module, by joining connection materials of the power semiconductor module with a semiconductor element 6 having a laminated structure of Ni/Cu/Ni/Sn, a metallic compound is microfabricated to improve thermal shock resistance and generation of voids inside a solder bonded part associated with ON/OFF of energization is suppressed thereby to obtain high reliability.