MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

PROBLEM TO BE SOLVED: To enhance the characteristics of a magnetoresistance effect element.SOLUTION: The magnetoresistance effect element comprises: a first magnetic film 10 having a variable direction of magnetization; a second magnetic film 11 having an invariable direction of magnetization; and a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KATO YUSHI, KITAGAWA EIJI, DAIBO TATATOMI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To enhance the characteristics of a magnetoresistance effect element.SOLUTION: The magnetoresistance effect element comprises: a first magnetic film 10 having a variable direction of magnetization; a second magnetic film 11 having an invariable direction of magnetization; and a nonmagnetic film 12 provided between the first and second magnetic films in contact with at least one of them, and containing a magnesium oxide film to which at least one element, selected from a first group including copper, silver and gold, is added.