SINTERED BODY OF In-Ga-Zn-O-BASED OXIDE, METHOD FOR PRODUCING THE SAME, SPUTTERING TARGET AND OXIDE SEMICONDUCTOR FILM

PROBLEM TO BE SOLVED: To provide a sintered body of an In-Ga-Zn-O-based oxide having improved film-forming speed and applicable to a sputtering target, and a method for producing the sintered body.SOLUTION: There is provided a sintered body of an In-Ga-Zn-O-based oxide containing In, Ga, Zn and O as...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	SOGABE KENTARO, HASHIGUCHI KAN
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY REFRACTORIES SEMICONDUCTOR DEVICES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a sintered body of an In-Ga-Zn-O-based oxide having improved film-forming speed and applicable to a sputtering target, and a method for producing the sintered body.SOLUTION: There is provided a sintered body of an In-Ga-Zn-O-based oxide containing In, Ga, Zn and O as constituent elements, having a content ratio of Ga to In of ≥1.0 and ≤1.6 in terms of atomic number ratio [Ga]/[In] and having a content ratio of Zn to In of ≥0.01 and ≤1.0 in terms of atomic number ratio [Zn]/[In]. Peak positions (2 ) of (009) plane, (101) plane and (104) plane of InGaZnOphase by X-ray diffraction with CuKα rays are deviated by ≥0.10° on a low angle side or high angle side compared with the corresponding peaks of an InGaZnOstandard peak list of ICDD database, and the sintered body has a specific resistance of ≤1.0×10 cm, and an average crystal particle diameter of ≥8.0 μm and ≤15.0 μm.