METHOD FOR PRODUCING SILICON SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To provide a method for producing a silicon single crystal capable of suppressing generation of translocation extending from a neck part to a straight body part.SOLUTION: A method for producing a silicon single crystal includes: a preparing step (S10) of preparing a silicon mel...

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Bibliographische Detailangaben
Hauptverfasser:	LEHMANN LOTHAR, OKABE KOJI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for producing a silicon single crystal capable of suppressing generation of translocation extending from a neck part to a straight body part.SOLUTION: A method for producing a silicon single crystal includes: a preparing step (S10) of preparing a silicon melted liquid; a neck part forming step (S20) of forming a neck part connected with a seed crystal by bringing the seed crystal into contact with the silicon melted liquid; a cutting-off step (S30) of cutting off the neck part from the silicon melted liquid; a cooling step (S40) of lowering the temperature of the neck part cut off from the silicon melted liquid than the temperature of the neck part in the neck part forming step (S20); a regrowing step (S50) of forming a silicon single crystal connected with the neck part by bringing the neck part into contact again with the silicon melted liquid, after the cooling step (S40).