CHEMICAL VAPOR DEPOSITED FILM FORMED BY PLASMA CVD METHOD

PROBLEM TO BE SOLVED: To provide a film structure for a gas barrier film comprising a base material with mixed organic and inorganic substances and having high adhesion with both substances and high barrier characteristics, and to provide a method for manufacturing the same.SOLUTION: A chemical vapo...

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Hauptverfasser:	YAMASHITA MASAMITSU, FUJIMOTO TAKAYOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM METALLURGY PERFORMING OPERATIONS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a film structure for a gas barrier film comprising a base material with mixed organic and inorganic substances and having high adhesion with both substances and high barrier characteristics, and to provide a method for manufacturing the same.SOLUTION: A chemical vapor deposited film formed by a plasma chemical vapor deposition (CVD) method including silicon atoms, oxygen atoms, carbon atoms, and hydrogen atoms, with the concentration of oxygen atoms being 10-35% by element, and a laminated body including: the chemical vapor deposited film; a second chemical vapor deposited film containing silicon atoms and at least 0% and less than 10% by element of oxygen atoms and formed by the plasma CVD method; and a third chemical vapor deposited film containing silicon atoms and more than 35% and no more than 70% by element of oxygen atoms and formed by the plasma CVD method, wherein the second chemical vapor deposited film and the third chemical vapor deposited film are laminated onto one surface of the chemical vapor deposited film, are provided.