SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS

PROBLEM TO BE SOLVED: To intensify the effect of self-limit which is feature of an ALD method to achieve improved uniformity of a wafer surface in manufacturing of a semiconductor device by performing deposition by the ALD method.SOLUTION: A semiconductor device manufacturing method comprises a process of forming an oxide film on the substrate by performing: a process of carrying a substrate in a processing chamber; a process of alternately supplying to the substrate, a material gas and a catalyst gas which is subjected to a dehydration treatment, and an oxidative gas and the catalyst gas so as not to be mixed to the substrate; and a process of carrying the substrate out of the processing chamber.