SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To suppress occurrence of a short circuit between a contact on a columnar semiconductor layer and a gate electrode formed around the columnar semiconductor layer, in a vertical transistor.SOLUTION: In a substrate, a planar semiconductor layer is formed thereon and a columnar semiconductor layer is formed on the planar semiconductor layer. A second drain/source region is formed on the upper part of the columnar semiconductor layer, a contact stopper film and a contact interlayer film are formed. A contact is formed on the second drain/source region. Here, forming of the contact includes formation of a contact pattern, and etching of the contact interlayer film down to the contact stopper film using a pattern of the contact thereafter, to form a contact hole for the contact, and then removing of the contact stopper film by etching those remaining on the bottom part of the contact hole for the contact. A projection plane of the bottom surface of the contact hole for the contact onto the substrate is located within the outer periphery of the projection shape of the contact stopper film formed on an upper surface and a side surface of the columnar semiconductor layer onto the substrate.