SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a circuit layout which can be reduced in size and which has high degree of freedom in wiring connection.SOLUTION: A semiconductor device comprises: a first region composed of a first and a second region; a first transistor having a first and a second diffusion region...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	HIRAMATSU TATSUYA, YOSHIKAWA TORU, SATO JUNPEI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a circuit layout which can be reduced in size and which has high degree of freedom in wiring connection.SOLUTION: A semiconductor device comprises: a first region composed of a first and a second region; a first transistor having a first and a second diffusion region and a first control gate formed in the surface of the first region within the first region; a second transistor having a third and a fourth diffusion region and a second control gate formed in the surface of the first region within the second region; a first wiring layer formed on the first and the second control gates along the longer direction of the gates across the first region and the second region; and a first plug CP 2 formed on the first control gate. The first plug is formed in a different region than a region in which the first wiring layer is formed.