METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which enhances the resistance to a developer without increasing a film thickness of a protective film in a double exposure technology, and achieves micro patterning.SOLUTION: In the method of manufacturing the semicond...

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Bibliographische Detailangaben
1. Verfasser:	MIZUNO KANEKAZU
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which enhances the resistance to a developer without increasing a film thickness of a protective film in a double exposure technology, and achieves micro patterning.SOLUTION: In the method of manufacturing the semiconductor device, a protective film composed of at least two kinds of films is formed on a first resist pattern formed on a substrate. The film is formed by using raw material gases activated by different activation means, respectively.