IMPROVED CHAMBER CLEANING METHOD AND APPARATUS

PROBLEM TO BE SOLVED: To provide an apparatus which increases a cleaning speed of a chamber where a thin film transistor and other semiconductor devices are manufactured by chemical vapor deposition etc.SOLUTION: An apparatus includes: a remote plasma chamber 50 where a reactive gas chemical species...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	GREEN ROBERT I, HARSHBARGER WILLIAM R, SUN SHENG, SHANG QUANYUAN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CLEANING CLEANING IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an apparatus which increases a cleaning speed of a chamber where a thin film transistor and other semiconductor devices are manufactured by chemical vapor deposition etc.SOLUTION: An apparatus includes: a remote plasma chamber 50 where a reactive gas chemical species chemically cleaning deposited substances from the chamber is generated; and an aluminum process chamber where a surface that is subject to the reactive gas chemical species has a mirror polished surface. In order to improve the chamber cleaning efficiency, the mirror polished surface 64 is formed by a surface of a gas distribution plate 12 or a backing plate 13 etc. and/or surfaces of a chamber wall liner 29 and a gas conductance line 48 etc. that are subject to the reactive chemical species. All of the aluminum surfaces, with which the reactive chemical species contact, are mirror polished.