METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE CRYSTAL AND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for producing a high-quality group III nitride crystal having few crystal defects.SOLUTION: This method includes a wet-etching step of wet-etching the surface 11a of a group III nitride seed crystal 11, and a crystal growth step of growing a group III nitrid...

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Hauptverfasser:	IMAIDE KAN, YOSHIMURA MASASHI, MORI YUSUKE, MASUMOTO KEIKO, HIRAO MIHOKO, FUJIMORI TAKU
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for producing a high-quality group III nitride crystal having few crystal defects.SOLUTION: This method includes a wet-etching step of wet-etching the surface 11a of a group III nitride seed crystal 11, and a crystal growth step of growing a group III nitride crystal 12 from the wet-etched seed crystal surface 11b, wherein dislocation density of the group III nitride crystal 12 grown in the crystal growth step is lower than dislocation density of the seed crystal surface 11b after wet-etching in the wet-etching step.