METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To reduce power consumption, noise, and a manufacturing cost of a semiconductor device and to improve a yield and reliability by manufacturing a semiconductor device in which integrated circuits and MEMS elements with excellent workability are integrated into one chip in a simple step.SOLUTION: A method for manufacturing a semiconductor device comprises the steps of: forming a first mask layer on a first principal surface of a silicon substrate and a second mask layer on a second principal surface; simultaneously patterning the first mask layer and the second mask layer by photolithography; forming a first silicon oxide layer by oxidizing the first principal surface of the silicon substrate exposed as a result of patterning the first mask layer and forming a second silicon oxide layer by oxidizing the second principal surface of the silicon substrate exposed as a result of patterning the second mask layer; and processing the second principal surface of the silicon substrate using the second silicon oxide layer as a mask.