SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To solve the problem that a leakage current due to crystal defects cannot be reduced in a capacitorless DRAM such as TRAM.SOLUTION: A thyristor used in a semiconductor device such as TRAM includes an N+layer 9, a P channel 14, an N base layer 18 and a P+layer 19. The P channel...

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Bibliographische Detailangaben
1. Verfasser: KUJIRAI YUTAKA
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To solve the problem that a leakage current due to crystal defects cannot be reduced in a capacitorless DRAM such as TRAM.SOLUTION: A thyristor used in a semiconductor device such as TRAM includes an N+layer 9, a P channel 14, an N base layer 18 and a P+layer 19. The P channel 14 is formed of silicon nanowire, thereby a band gap of silicon is expanded, and as a result, a leakage current due to thermal excitation can be reduced.