METHOD FOR FORMING AMORPHOUS SILICON FILM

PROBLEM TO BE SOLVED: To provide a method for forming an amorphous silicon film capable of reducing a defect level in an interface between a single crystal silicon substrate and an amorphous silicon film, and a manufacturing cost.SOLUTION: A method for forming an amorphous silicon film comprises the steps of: processing a surface of a single crystal silicon substrate by exposing the surface of the single crystal silicon substrate to a first material gas in a film forming chamber; and forming an amorphous silicon film on the processed surface of the single crystal silicon substrate by a plasma CVD method using a second material gas corresponding to the first material gas in the film forming chamber.