METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon carbide semiconductor device capable of suppressing damages generated at an interface between silicon carbide and metal when a metal material is sputtered to deposit a metal film on a silicon carbide substrate, and of manufacturing a silicon carbide semiconductor device having constant electric characteristics with stability.SOLUTION: A target 23 made of a metal material is sputtered to deposit a metal film on a silicon carbide substrate 10. At this time, the metal film is deposited on a condition that an incident energy to the silicon carbide substrate 10, of the metal material sputtered from the target 23 and a sputtering gas flowed in from a gas introduction port 27 is smaller than a binding energy of silicon carbide, in concrete terms, on a condition that the incident energy is smaller than 4.8 eV. For example, a high-frequency voltage applied between a cathode 21 and an anode 22 is set to be 20 V or more and 300 V or less to deposit the metal film.