SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To ensure the interface uniformity of a substrate surface in batch processing of a semiconductor substrate.SOLUTION: A vertical SiC film formation apparatus is provided with: a reaction tube 42 forming a reaction space and composed mainly of quartz; an induction coil for heatin...

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Bibliographische Detailangaben

Hauptverfasser:	NISHIDO SHUHEI, SHIRAKO KENJI, SASAKI TAKASHI, FUKUDA MASANAO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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