SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To ensure the interface uniformity of a substrate surface in batch processing of a semiconductor substrate.SOLUTION: A vertical SiC film formation apparatus is provided with: a reaction tube 42 forming a reaction space and composed mainly of quartz; an induction coil for heating a semiconductor wafer 14 held by a wafer holder 15 to a treatment temperature; a cylindrical heated body heated up by an eddy current generated by the induction coil and made of carbon graphite; and a heat insulation material 54 preventing a temperature of the reaction tube 42 from rising by radiated heat radiated by the heated body. In the vertical SiC film formation apparatus, a process gas 60 is jetted from a hole 62c disposed at a position higher than a top plate 30a of a boat 30 of a supply nozzle 62a thereby forming a flow of the process gas 60 that is active in the position higher than the top plate 30a of the boat 30.