ORGANIC THIN-FILM TRANSISTOR INSULATING LAYER MATERIAL

PROBLEM TO BE SOLVED: To provide an organic thin-film transistor insulating layer material capable of forming an organic thin-film transistor insulating layer having high resistance to a metal vapor used in a sputtering method.SOLUTION: The organic thin-film transistor insulating layer material cont...

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Bibliographische Detailangaben
1. Verfasser:	YAHAGI AKIRA
Format:	Patent
Sprache:	eng
Schlagworte:	ADVERTISING BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON CRYPTOGRAPHY DISPLAY DISPLAYING EDUCATION ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY LABELS OR NAME-PLATES MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS PHYSICS SEALS SEMICONDUCTOR DEVICES SIGNS THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an organic thin-film transistor insulating layer material capable of forming an organic thin-film transistor insulating layer having high resistance to a metal vapor used in a sputtering method.SOLUTION: The organic thin-film transistor insulating layer material contains a polymer compound (A) including: a repeating unit containing a cyclic ether structure; a repeating unit containing a functional group which absorbs light energy or electron beam energy to cause a dimerization reaction; and a repeating unit containing an organic group which generates a phenolic hydroxyl group by the action of an acid.