SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide an ohmic electrode structure for reducing ohmic resistance of a field effect transistor (FET) especially at a high frequency.SOLUTION: A semiconductor device according to a present embodiment comprises an ohmic electrode formed on a semiconductor and a wiring electro...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | PROBLEM TO BE SOLVED: To provide an ohmic electrode structure for reducing ohmic resistance of a field effect transistor (FET) especially at a high frequency.SOLUTION: A semiconductor device according to a present embodiment comprises an ohmic electrode formed on a semiconductor and a wiring electrode connected to the ohmic electrode. The semiconductor device further comprises a plurality of irregularities formed at a boundary surface between the semiconductor and the ohmic electrode and on the ohmic electrode. The ohmic electrode includes a straight line part which is parallel with a normal line of a boundary surface between the ohmic electrode and the wiring electrode at a part where the irregularities are not formed. |
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