RESIST STRIPPING SOLUTION AND RESIST STRIPPING METHOD

PROBLEM TO BE SOLVED: To provide: a stripping solution which can dissolve and strip a negative photoresist used for pattern formation on a substrate, such as a silicon substrate, a glass substrate, a metal film substrate and a metal oxide film substrate, quickly and securely at low temperature even...

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Bibliographische Detailangaben
Hauptverfasser:	TOMEBA TSUNEMITSU, DIMITRI JANSSEN, STEFAN VANCLOOSTER, MATHIEU MALFAIT
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide: a stripping solution which can dissolve and strip a negative photoresist used for pattern formation on a substrate, such as a silicon substrate, a glass substrate, a metal film substrate and a metal oxide film substrate, quickly and securely at low temperature even after heat treatment; and a stripping method using the stripping solution.SOLUTION: The resist stripping solution for stripping a negative photoresist contains (a) 70-95 mass% of a hydrocarbon solvent containing three or more kinds of naphthalene substituted with alkyl groups and containing 50 mass% or more of the total content of the three or more kinds of naphthalene, and (b) 5-30 mass% of benzenesulfonic acid substituted with alkyl groups and having the total carbon number of 8 or more.