METHOD FOR FORMING FINE PATTERN AND COATING AGENT FOR MICROFABRICATING PATTERN

PROBLEM TO BE SOLVED: To provide a method for forming a fine pattern, the method microfabricating a resist pattern formed in a negative development process in a favorable manner.SOLUTION: A resist pattern is formed by a method including: a resist film forming step of applying the following resist co...

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Bibliographische Detailangaben
Hauptverfasser:	SHIRAI YURIKO, SUGAWARA MAI, NAMIKI TAKUMI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for forming a fine pattern, the method microfabricating a resist pattern formed in a negative development process in a favorable manner.SOLUTION: A resist pattern is formed by a method including: a resist film forming step of applying the following resist composition on a substrate; an exposing step; a developing step of forming a resist pattern by use of a developer; a coating film forming step of applying a coating agent for microfabricating pattern on the resist pattern, the coating agent including (D) a resin and (C) a solvent comprising organic solvents alone; and a pattern narrowing step of heating the resist pattern having the coating film. The resist composition comprises: (A) a base material whose solubility in a developer containing an organic solvent decreases by an action of an acid; (B) a compound that generates an acid by irradiation with actinic rays or radiation; and (C) an organic solvent.