METHOD OF MANUFACTURING VAPOR-DEPOSITED FILM AND LAMINATE PACKAGING MATERIAL

PROBLEM TO BE SOLVED: To provide a method of manufacturing a vapor-deposited film having adhesion even when a hot water treatment such as boiling sterilization or retort sterilization is performed thereon.SOLUTION: In the method of manufacturing the vapor-deposited film including the steps of perfor...

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Hauptverfasser:	UEDA YUKINORI, TATEISHI YASUSHI, ONO MASAAKI
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM METALLURGY PERFORMING OPERATIONS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method of manufacturing a vapor-deposited film having adhesion even when a hot water treatment such as boiling sterilization or retort sterilization is performed thereon.SOLUTION: In the method of manufacturing the vapor-deposited film including the steps of performing a plasma processing by a planar magnetron type plasma processing electrode while continuously running a base film and subsequently forming a vapor-deposited layer, at a traveling position of the base film immediately above the plasma processing electrode, the maximum value of a magnetic flux density parallel to a surface of the plasma processing electrode and also parallel to a film traveling direction measured along the traveling direction of the film at an optional position in a film width direction of the base film is 20-100 mT. The base film surface is plasma processed with a plasma processing strength of 10-20 Wmin/m, and then the vapor-deposited layer is formed.