MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND PROGRAM

PROBLEM TO BE SOLVED: To increase carbon concentration in a carbonitride film by improving productivity when the carbonitride film is deposited.SOLUTION: A manufacturing method for a semiconductor device includes a step of forming a film containing a prescribed element, nitrogen, and carbon on a sub...

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Bibliographische Detailangaben
Hauptverfasser:	HIGASHINO KEIKO, YANAGIDA KAZUTAKA, HIROSE YOSHIRO, SANO ATSUSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Zusammenfassung:	PROBLEM TO BE SOLVED: To increase carbon concentration in a carbonitride film by improving productivity when the carbonitride film is deposited.SOLUTION: A manufacturing method for a semiconductor device includes a step of forming a film containing a prescribed element, nitrogen, and carbon on a substrate by alternately performing the following steps a prescribed number of times: supplying a material gas containing the prescribed element and a halogen element to the substrate; and supplying a reaction gas which is composed of three elements of carbon, nitrogen, and hydrogen to the substrate and in which the number of carbon atoms is greater than the number of nitrogen atoms in a composition formula.