SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device which can inhibit a substrate bias effect more effectively.SOLUTION: A semiconductor device according to a present embodiment comprises: a surface Si layer in a floating state which is stacked on an embedded insulation film and which composes an SOI substrate; a source region 3, a drain region 4, and a channel region 5, which are formed on the surface Si layer; a gate electrode 2 formed on the channel region 5 via a gate oxide film 7; and a recombination structure which recombines carriers stored in the channel region and which includes a body lead-out region 5a extended from the channel region 5 and formed at an end of the gate electrode 2, and an embedded layer 6a embedded in a trench 15 formed in the body lead-out region 5a.