SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of being manufactured with ease, and that uses a nitride semiconductor having a gate insulating film and whose gate threshold voltage is positive.SOLUTION: A semiconductor device comprises: a nitride semiconductor layer formed on a subs...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a semiconductor device capable of being manufactured with ease, and that uses a nitride semiconductor having a gate insulating film and whose gate threshold voltage is positive.SOLUTION: A semiconductor device comprises: a nitride semiconductor layer formed on a substrate; an insulating film formed on the nitride semiconductor layer; a semiconductor film formed on the insulating film; and an electrode formed on the semiconductor film. The semiconductor film contains fluorine. |
|---|