PLASMA TREATMENT APPARATUS APPLIED FOR SPUTTERING FILM FORMING

PROBLEM TO BE SOLVED: To provide a capacitive coupling type plasma treatment apparatus for a sputtering film forming, which forms an ion flux with a uniform high concentration on a surface of a substrate without causing redeposition to a target.SOLUTION: A plasma treatment apparatus, in which a magn...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	NAGAHAMA HANAKO, SNIL WIKURAMANAYAKA, WATANABE EISAKU, MIZUNO SHIGERU, SATO MAKOTO
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a capacitive coupling type plasma treatment apparatus for a sputtering film forming, which forms an ion flux with a uniform high concentration on a surface of a substrate without causing redeposition to a target.SOLUTION: A plasma treatment apparatus, in which a magnet is attached to a metal sheet, includes: an upper electrode 1 provided with a capacitive coupling type mechanism; a target member 2 which is fixed to the upper electrode and made from a nonmagnetic substance, a plurality of magnets 6 which are arranged on the upper surface of the target member, have equal distance between the two of the magnets, and also have alternately changing magnetic pole polarities; a lower electrode 3 arranged in parallel with the upper electrode; a wafer 17 mounted on the lower electrode; a high frequency power source 16 which is operated at a frequency in the range of 10 to 300 MHz and connected with the upper electrode via a matching circuit 15, and a rolling mechanism which rotates a plurality of magnets around a central axis of the upper electrode.