PLASMA PROCESSING APPARATUS

PROBLEM TO BE SOLVED: To easily and securely prevent an RF power trailing phenomenon on a high frequency feed line when power modulation is performed to a switching type high frequency power source.SOLUTION: In a capacity coupling type plasma processing apparatus, a susceptor (a lower electrode) 16...

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Bibliographische Detailangaben
Hauptverfasser:	NAGAUMI KOICHI, MAEHARA DAISUKE, IKENARI TATSUYA, TACHIKAWA TOSHIFUMI, YAMADA NORIKAZU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To easily and securely prevent an RF power trailing phenomenon on a high frequency feed line when power modulation is performed to a switching type high frequency power source.SOLUTION: In a capacity coupling type plasma processing apparatus, a susceptor (a lower electrode) 16 and an upper electrode 46 serving as a shower head are disposed in a vacuum chamber 10 facing each other. First and second high frequency power sources 36, 38 are electrically connected with the susceptor 16 through matching boxes 40, 42 respectively. The first high frequency power source 36 is formed by a linear amplifier type high frequency power source and outputs a first high frequency wave RF1 for plasma generation. The second high frequency power source 38 is formed by a switching type high frequency power source and outputs a second high frequency wave RF2 for ion extraction. A residual high frequency wave removal part 74 is connected with a high frequency feed line 43 at the second high frequency power source 38 side.