NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a highly-reliable flip-chip nitride semiconductor light-emitting element having metal bumps with a uniform height, and to provide a method of manufacturing the same.SOLUTION: In a method of manufacturing a nitride semiconductor light-emitting element, a protection layer is removed by using a first resist pattern 30 having an opening on an n-side electrode connection surface and on a p-side electrode connection surface of a nitride semiconductor light-emitting element structure 10 as a mask, and then, a first metal layer 25 to be an n-side electrode and a p-side electrode is formed without removing the first resist pattern 30. Next, a second resist pattern 31 having openings 31a and 31b is formed on the opening of the first resist pattern 30, and second metal layers 26a and 26b to be metal bumps are formed by electrolytic plating using the first metal layer 25 as an electrode. Thereafter, the opening 31b is covered with a third resist pattern 32, and a third metal layer 27 is formed on the second metal layer 26a by electrolytic plating to uniform heights of the metal bumps on the n-side electrode and the p-side electrode.