METHOD AND APPARATUS FOR PRODUCING SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To counteract the bending of the crystallization boundary and the loading on a single crystal by thermal stress in a more advantageous way.SOLUTION: There are disclosed a method and an apparatus for producing a single crystal by means of a floating zone method, wherein the sing...

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Hauptverfasser:	LOBMEYER JOSEF, HOLZINGER ALFRED, GUNDARS RATNIEKS, ALTMANNSHOFER LUDWIG, GEORG RAMING, LANDRICHINGER JOHANN
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To counteract the bending of the crystallization boundary and the loading on a single crystal by thermal stress in a more advantageous way.SOLUTION: There are disclosed a method and an apparatus for producing a single crystal by means of a floating zone method, wherein the single crystal crystallizes with the support of an induction heating coil below a melt zone at a crystallization boundary, and the emission of crystallization heat is impeded by a reflector surrounding the single crystal, which are characterized in that the single crystal is heated in the region of an outer edge of the crystallization boundary by means of a heating device in a first zone, wherein a distance between an outer triple point Ta at the outer edge of the crystallization boundary and a center Z of the crystallization boundary is influenced.