SEMICONDUCTOR DEVICE AND STACKED SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing the same which improve a yield of connectivity of wiring formed on a semiconductor element and do not require high accuracy when the semiconductor element is mounted on a support plate.SOLUTION: The semiconductor...

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Bibliographische Detailangaben
Hauptverfasser: YAMAGATA OSATAKE, IWAMI YASUNARI, CHIKAI TOMOYA, TAKAHASHI TOMOKO, MARUTANI SHOICHI, MITSUGI SHINGO, CHAN SUNG HO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing the same which improve a yield of connectivity of wiring formed on a semiconductor element and do not require high accuracy when the semiconductor element is mounted on a support plate.SOLUTION: The semiconductor device includes: a support plate; a semiconductor element which is mounted on the support plate and has a circuit element surface having a plurality of first electrodes thereon; a first insulating layer which covers the circuit element surface of the semiconductor element and has a plurality of first openings for exposing the plurality of first electrodes; a second insulating layer which covers an upper part of the support plate and a side part of the semiconductor element having the first insulating layer formed thereon; and a wiring layer which is formed in contact with upper parts of the first insulating layer and the second insulating layer and is electrically connected to the plurality of first electrodes. The method for manufacturing the semiconductor device reduces warpage of the support plate due to thermal stress, improves a yield of connectivity of wiring, and dispenses with mounting accuracy of an advanced semiconductor element required during opening formation.