MELT COMPOSITION-CONTROLLED UNIDIRECTIONALLY SOLIDIFYING CRYSTAL GROWTH APPARATUS AND METHOD

PROBLEM TO BE SOLVED: To provide a crystal growth apparatus and method capable of securely manufacturing a langasite single crystal or a langatate single crystal.SOLUTION: The method includes using a langasite single crystal as a seed crystal 2, LaGaSiO(0

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Bibliographische Detailangaben
Hauptverfasser:	FURUKAWA YASUNORI, HOSHIKAWA KEIGO, MATSUKURA MAKOTO, MATSUMURA SADAO, MIYAMOTO AKIO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a crystal growth apparatus and method capable of securely manufacturing a langasite single crystal or a langatate single crystal.SOLUTION: The method includes using a langasite single crystal as a seed crystal 2, LaGaSiO(0