MANUFACTURING METHOD OF EPITAXIAL WAFER WITH EMBEDDING REGION

PROBLEM TO BE SOLVED: To provide a manufacturing method of an epitaxial wafer with an embedding region, which can form an epitaxial layer from a boron implanted region while preventing auto dope, in particular, auto dope in a lateral direction.SOLUTION: A manufacturing method of an epitaxial wafer w...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TAKAMIZAWA SHOICHI, MARUYAMA HIROYUKI, ITAMI TAKASHI, SAYAMA TAKASHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!