MANUFACTURING METHOD OF EPITAXIAL WAFER WITH EMBEDDING REGION

PROBLEM TO BE SOLVED: To provide a manufacturing method of an epitaxial wafer with an embedding region, which can form an epitaxial layer from a boron implanted region while preventing auto dope, in particular, auto dope in a lateral direction.SOLUTION: A manufacturing method of an epitaxial wafer with an embedding region by forming an epitaxial layer on a semiconductor wafer, comprises: forming a boron implanted region by ion implantation into the semiconductor wafer; forming an oxide film by performing a thermal treatment under a wet oxidation atmosphere or a steam oxidation atmosphere; and removing the oxide film to form an epitaxial layer thereby to manufacture the epitaxial wafer having a boron embedding region.