SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To suppress leakage due to migration of Ag.SOLUTION: A semiconductor element comprises: a semiconductor laminate including a first-conductivity-type first semiconductor layer, an active layer formed on the first semiconductor layer, and a second-conductivity-type second semicon...

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Bibliographische Detailangaben
1. Verfasser: CHINONE TAKAKO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To suppress leakage due to migration of Ag.SOLUTION: A semiconductor element comprises: a semiconductor laminate including a first-conductivity-type first semiconductor layer, an active layer formed on the first semiconductor layer, and a second-conductivity-type second semiconductor layer formed on the active layer; an Rh layer formed on one main surface of the semiconductor laminate; an Ag layer having an area smaller than that of the Rh layer, on the Rh layer; and a cap layer covering the Ag layer.