SEMICONDUCTOR LASER ELEMENT MANUFACTURING METHOD AND SEMICONDUCTOR LASER ELEMENT

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor laser element having more excellent laser characteristics.SOLUTION: A semiconductor laser element manufacturing method of an embodiment comprises: forming cleavage guide grooves on a surface of a production substrate in which an epitaxial layer including a luminescent layer is formed on a semi-polar face of a hexagonal group-III nitride semiconductor substrate having the semi-polar face. At this time, the cleavage guide grooves each extending along a scribe line and having a V-shaped cross section are formed in some region of the semiconductor laser element on the scribe line on the side of a resonator end face, the region including at least one corner of the semiconductor laser element. The semiconductor laser element manufacturing method comprises: cleaving along the scribe lines, the production substrate on which the cleavage guide grooves are formed.