SINGLE CRYSTAL GROWTH METHOD AND APPARATUS THEREOF

PROBLEM TO BE SOLVED: To suppress the occurrence of the four time symmetrical dislocation of a single crystal.SOLUTION: In a method for growing a single crystal whose growth surface is (100), and whose crystal structure is a ZnS structure by loading a quartz glass growth container enclosed by a cera...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	SATO SHIGEYOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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