SINGLE CRYSTAL GROWTH METHOD AND APPARATUS THEREOF

PROBLEM TO BE SOLVED: To suppress the occurrence of the four time symmetrical dislocation of a single crystal.SOLUTION: In a method for growing a single crystal whose growth surface is (100), and whose crystal structure is a ZnS structure by loading a quartz glass growth container enclosed by a ceramic support member in which a seed crystal is stored at a lower part, and crystal raw materials are stored above the seed crystal in a vertical furnace, and melting the crystal raw materials, and cooling the melt in a direction of the seed crystal, the temperature in the four directions of in which the four time symmetrical dislocation of the single crystal easily occurs is held so as to be lower than the temperature in the four directions of , and the solidification in the four directions of is set to be quicker than that in the four directions of in the cooling process.