SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREFOR, MANUFACTURING SYSTEM FOR SEMICONDUCTOR LIGHT-EMITTING ELEMENT

PROBLEM TO BE SOLVED: To enhance and stabilize luminous output by suppressing the production variation (production fluctuation) of doping density designed and depth direction distribution.SOLUTION: The manufacturing method for a semiconductor light-emitting element includes: a capacitance measurement step for measuring the capacitance between a p-type electrode 11 and an n-type electrode 12 by capacitance measurement means after formation of the p-type electrode 11 and n-type electrode 12; an impurity concentration distribution calculation step (not shown) for calculating an impurity concentration distribution from the capacitance thus measured by impurity concentration distribution calculation means; and a first impurity concentration distribution control step (not shown) for controlling MOCVD means so as to obtain a maximum luminous output when first impurity concentration distribution control means forms a luminous layer in next lot or a substrate, by using the lowest value of impurity concentration distribution thus calculated as a feature value.