MANUFACTURING METHOD OF MOLECULAR MEMORY DEVICE

PROBLEM TO BE SOLVED: To provide a manufacturing method of a molecular memory device having a cross-point structure in which states of memory elements are excellent.SOLUTION: A manufacturing method of a molecular memory device related to one embodiment comprises the steps of: forming a wiring layer including a plurality of pieces of first wiring extending in a first direction; forming a sacrificial film on the wiring layer; forming a plurality of first insulation members extending in a second direction on the sacrificial film; removing portions corresponding to regions immediately below portions positioned among the plurality of first insulation members adjacent to one another and among a plurality of pieces of second wiring at the sacrificial film while forming the plurality of pieces of second wiring made of conductive materials different from those of the plurality of pieces of first wiring on lateral surfaces of the first insulation members; forming a plurality of second insulation members such that the plurality of second insulation members are brought into contact with the wiring layer among the first insulation members adjacent to one another and among the second wiring; forming a gap by removing the sacrificial film; and forming molecule materials that are bonded to one of the first wiring and the second wiring and are not bonded to the other thereof in the gap.