ALUMINUM NITRIDE SINTERED COMPACT AND METHOD FOR PRODUCING THE SAME

PROBLEM TO BE SOLVED: To provide an aluminum nitride sintered compact containing no sintering aid including a group 3A oxide and having small surface roughness even when processed by grinding work, and a method for producing the same.SOLUTION: There is provided the anti-corrosive aluminum nitride si...

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Hauptverfasser: ISHIDA HIRONORI, KANNO AKIRA, UMEKI TOSHIYA, TSUCHIDA ATSUSHI, KITABAYASHI TETSUO
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creator ISHIDA HIRONORI
KANNO AKIRA
UMEKI TOSHIYA
TSUCHIDA ATSUSHI
KITABAYASHI TETSUO
description PROBLEM TO BE SOLVED: To provide an aluminum nitride sintered compact containing no sintering aid including a group 3A oxide and having small surface roughness even when processed by grinding work, and a method for producing the same.SOLUTION: There is provided the anti-corrosive aluminum nitride sintered compact with ≥99% purity, having 3.20×10kg/mdensity and containing ≥200 ppm and ≤400 ppm Ca, ≥10 ppm and ≤100 ppm Si and ≥220 ppm and ≤1,500 ppm C. The aluminum nitride sintered compact does not contain the sintering aid including the group 3A oxide, and contains Ca which is a densification-promoting material, and Si and C which are densification-inhibiting materials in each predetermined amount. Thus, the surface roughness of the aluminum nitride sintered compact can be reduced on a ground surface. As the result, anti-corrosive properties of the aluminum nitride sintered compact can be improved, and the surface area of the ground surface becomes smaller.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2013112556A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2013112556A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2013112556A3</originalsourceid><addsrcrecordid>eNqNyrEKwjAQANAsDqL-w9FdMC11D5eriZhLiJe5FImTaKH-Pzr4AU5veWuF5lKC5xKAvWRvCa6ehTJZwBiSQQHDFgKJixaGmCHlaAt6PoG47zaBtmp1nx5L3f3cqGYgQbev82usyzzd6rO-x3NqD7rTuu37o-n-Sh93Iyu7</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ALUMINUM NITRIDE SINTERED COMPACT AND METHOD FOR PRODUCING THE SAME</title><source>esp@cenet</source><creator>ISHIDA HIRONORI ; KANNO AKIRA ; UMEKI TOSHIYA ; TSUCHIDA ATSUSHI ; KITABAYASHI TETSUO</creator><creatorcontrib>ISHIDA HIRONORI ; KANNO AKIRA ; UMEKI TOSHIYA ; TSUCHIDA ATSUSHI ; KITABAYASHI TETSUO</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide an aluminum nitride sintered compact containing no sintering aid including a group 3A oxide and having small surface roughness even when processed by grinding work, and a method for producing the same.SOLUTION: There is provided the anti-corrosive aluminum nitride sintered compact with ≥99% purity, having 3.20×10kg/mdensity and containing ≥200 ppm and ≤400 ppm Ca, ≥10 ppm and ≤100 ppm Si and ≥220 ppm and ≤1,500 ppm C. The aluminum nitride sintered compact does not contain the sintering aid including the group 3A oxide, and contains Ca which is a densification-promoting material, and Si and C which are densification-inhibiting materials in each predetermined amount. Thus, the surface roughness of the aluminum nitride sintered compact can be reduced on a ground surface. As the result, anti-corrosive properties of the aluminum nitride sintered compact can be improved, and the surface area of the ground surface becomes smaller.</description><language>eng</language><subject>ARTIFICIAL STONE ; BASIC ELECTRIC ELEMENTS ; CEMENTS ; CERAMICS ; CHEMISTRY ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; LIME, MAGNESIA ; METALLURGY ; REFRACTORIES ; SEMICONDUCTOR DEVICES ; SLAG ; TREATMENT OF NATURAL STONE</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20130610&amp;DB=EPODOC&amp;CC=JP&amp;NR=2013112556A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20130610&amp;DB=EPODOC&amp;CC=JP&amp;NR=2013112556A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ISHIDA HIRONORI</creatorcontrib><creatorcontrib>KANNO AKIRA</creatorcontrib><creatorcontrib>UMEKI TOSHIYA</creatorcontrib><creatorcontrib>TSUCHIDA ATSUSHI</creatorcontrib><creatorcontrib>KITABAYASHI TETSUO</creatorcontrib><title>ALUMINUM NITRIDE SINTERED COMPACT AND METHOD FOR PRODUCING THE SAME</title><description>PROBLEM TO BE SOLVED: To provide an aluminum nitride sintered compact containing no sintering aid including a group 3A oxide and having small surface roughness even when processed by grinding work, and a method for producing the same.SOLUTION: There is provided the anti-corrosive aluminum nitride sintered compact with ≥99% purity, having 3.20×10kg/mdensity and containing ≥200 ppm and ≤400 ppm Ca, ≥10 ppm and ≤100 ppm Si and ≥220 ppm and ≤1,500 ppm C. The aluminum nitride sintered compact does not contain the sintering aid including the group 3A oxide, and contains Ca which is a densification-promoting material, and Si and C which are densification-inhibiting materials in each predetermined amount. Thus, the surface roughness of the aluminum nitride sintered compact can be reduced on a ground surface. As the result, anti-corrosive properties of the aluminum nitride sintered compact can be improved, and the surface area of the ground surface becomes smaller.</description><subject>ARTIFICIAL STONE</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMISTRY</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>CONCRETE</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>LIME, MAGNESIA</subject><subject>METALLURGY</subject><subject>REFRACTORIES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SLAG</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEKwjAQANAsDqL-w9FdMC11D5eriZhLiJe5FImTaKH-Pzr4AU5veWuF5lKC5xKAvWRvCa6ehTJZwBiSQQHDFgKJixaGmCHlaAt6PoG47zaBtmp1nx5L3f3cqGYgQbev82usyzzd6rO-x3NqD7rTuu37o-n-Sh93Iyu7</recordid><startdate>20130610</startdate><enddate>20130610</enddate><creator>ISHIDA HIRONORI</creator><creator>KANNO AKIRA</creator><creator>UMEKI TOSHIYA</creator><creator>TSUCHIDA ATSUSHI</creator><creator>KITABAYASHI TETSUO</creator><scope>EVB</scope></search><sort><creationdate>20130610</creationdate><title>ALUMINUM NITRIDE SINTERED COMPACT AND METHOD FOR PRODUCING THE SAME</title><author>ISHIDA HIRONORI ; KANNO AKIRA ; UMEKI TOSHIYA ; TSUCHIDA ATSUSHI ; KITABAYASHI TETSUO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2013112556A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2013</creationdate><topic>ARTIFICIAL STONE</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMISTRY</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>CONCRETE</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>LIME, MAGNESIA</topic><topic>METALLURGY</topic><topic>REFRACTORIES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SLAG</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>ISHIDA HIRONORI</creatorcontrib><creatorcontrib>KANNO AKIRA</creatorcontrib><creatorcontrib>UMEKI TOSHIYA</creatorcontrib><creatorcontrib>TSUCHIDA ATSUSHI</creatorcontrib><creatorcontrib>KITABAYASHI TETSUO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ISHIDA HIRONORI</au><au>KANNO AKIRA</au><au>UMEKI TOSHIYA</au><au>TSUCHIDA ATSUSHI</au><au>KITABAYASHI TETSUO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ALUMINUM NITRIDE SINTERED COMPACT AND METHOD FOR PRODUCING THE SAME</title><date>2013-06-10</date><risdate>2013</risdate><abstract>PROBLEM TO BE SOLVED: To provide an aluminum nitride sintered compact containing no sintering aid including a group 3A oxide and having small surface roughness even when processed by grinding work, and a method for producing the same.SOLUTION: There is provided the anti-corrosive aluminum nitride sintered compact with ≥99% purity, having 3.20×10kg/mdensity and containing ≥200 ppm and ≤400 ppm Ca, ≥10 ppm and ≤100 ppm Si and ≥220 ppm and ≤1,500 ppm C. The aluminum nitride sintered compact does not contain the sintering aid including the group 3A oxide, and contains Ca which is a densification-promoting material, and Si and C which are densification-inhibiting materials in each predetermined amount. Thus, the surface roughness of the aluminum nitride sintered compact can be reduced on a ground surface. As the result, anti-corrosive properties of the aluminum nitride sintered compact can be improved, and the surface area of the ground surface becomes smaller.</abstract><oa>free_for_read</oa></addata></record>
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subjects ARTIFICIAL STONE
BASIC ELECTRIC ELEMENTS
CEMENTS
CERAMICS
CHEMISTRY
COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS
CONCRETE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
LIME, MAGNESIA
METALLURGY
REFRACTORIES
SEMICONDUCTOR DEVICES
SLAG
TREATMENT OF NATURAL STONE
title ALUMINUM NITRIDE SINTERED COMPACT AND METHOD FOR PRODUCING THE SAME
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-16T08%3A44%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ISHIDA%20HIRONORI&rft.date=2013-06-10&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2013112556A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true