METHOD FOR PRODUCING NITRIDE CRYSTAL

PROBLEM TO BE SOLVED: To provide a method for producing a large sized nitride crystal having low dislocation and low distortion in which an influence of the curvature and distortion of a seed crystal on a crystal grown on the seed crystal is reduced.SOLUTION: There is provided the method for produci...

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Hauptverfasser:	KAMATA KAZUNORI, MIKAWA YUTAKA, FUJISAWA HIDEO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for producing a large sized nitride crystal having low dislocation and low distortion in which an influence of the curvature and distortion of a seed crystal on a crystal grown on the seed crystal is reduced.SOLUTION: There is provided the method for producing the nitride crystal in which the nitride crystal is obtained by growing a grown crystal on the seed crystal in the a-axis direction and the grown crystal is grown in the a-axis direction of the seed crystal without substantial appearance of an A surface as a growth surface.