METHOD FOR MANUFACTURING SILICON CARBIDE SINTERED COMPACT

PROBLEM TO BE SOLVED: To provide a method for manufacturing silicon carbide sintered compact having high strength even in an atmosphere of both at normal temperature and at high temperature.SOLUTION: The method for manufacturing silicon carbide sintered compact includes steps of: manufacturing silic...

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Hauptverfasser: KONO TSUNEHEI, SUZUKI MASAKAZU, KUMASAKA JUN, ICHINOTSUBO YUKITERU, MASUDA KENTA
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method for manufacturing silicon carbide sintered compact having high strength even in an atmosphere of both at normal temperature and at high temperature.SOLUTION: The method for manufacturing silicon carbide sintered compact includes steps of: manufacturing silicon carbide powder for obtaining the silicon carbide powder by heating particles composed of silica and carbon in which the silica and carbon are totally distributed and the content of B and P is ≤1 ppm using an Atchison furnace; and sintering the obtained silicon carbide powder to obtain the silicon carbide sintered compact.