MANUFACTURING METHOD AND CLEANING METHOD OF SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND PROGRAM

PROBLEM TO BE SOLVED: To provide a manufacturing method and a cleaning method of a semiconductor device, a substrate processing apparatus and a program, which can suppress contamination caused by foreign materials in a reaction tube.SOLUTION: A manufacturing method of a semiconductor device comprise...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	ASAI MASAYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a manufacturing method and a cleaning method of a semiconductor device, a substrate processing apparatus and a program, which can suppress contamination caused by foreign materials in a reaction tube.SOLUTION: A manufacturing method of a semiconductor device comprises: a step of forming a film on a substrate in a processing chamber; and a step of removing a deposit deposited at least on a part of the processing chamber after film deposition. In the removing step, a cycle including a first step of supplying a first gas for etching the deposit into the processing chamber, and a second process of supplying a second gas having less etching force on components constructing the processing chamber than at least that of the first gas or having no etching force to the components into the processing chamber and raising a pressure in the processing chamber is performed a predetermined number of times.