TEMPERATURE CONTROL METHOD, CONTROL APPARATUS, AND PLASMA PROCESSING APPARATUS

PROBLEM TO BE SOLVED: To shorten a waiting time for a temperature to be stabilized through optimization of temperature setting control.SOLUTION: A temperature control method of a plasma processing apparatus 1 that is capable of changing, in plasma processing in which a workpiece is processed through...

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Bibliographische Detailangaben
Hauptverfasser:	FUKASAWA KIMIHIRO, OZAWA WATARU, KAZAMA KAZUNORI, MIURA TATSUYA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To shorten a waiting time for a temperature to be stabilized through optimization of temperature setting control.SOLUTION: A temperature control method of a plasma processing apparatus 1 that is capable of changing, in plasma processing in which a workpiece is processed through a plurality of steps, a set temperature in each step, includes: a transportation step for performing at least one of a carrying-in step, in which the workpiece is carried into a processing container 10 of the plasma processing apparatus 1, and a carrying-out step, in which the workpiece is carried out; a processing execution step of executing the plasma processing composed of the plurality of steps; and a temperature control step for performing at least one of first temperature control, by which temperature control to the set temperature for the next processing is performed according to a timing of end of the executed plasma processing, and second temperature control, by which the temperature control to the set temperature for the next processing is performed in parallel with the carrying-in step or the carrying-out step.