SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC INFORMATION APPARATUS

PROBLEM TO BE SOLVED: To provide a solid-state imaging device capable of performing fine and high-speed transfer by avoiding an increase in a gap part between charge transfer electrodes due to thermal oxidation treatment without a read-out characteristic and sensitivity deterioration.SOLUTION: In a solid-state imaging device 100, a vertical CCD part 110 is structured to have: a transfer channel 3 formed in a silicon substrate 1 to transfer a signal charge; a plurality of charge transfer electrodes 8 arranged over the silicon substrate 1 through a gate insulation film 7 along the transfer channel 3; and an electrode separation insulation film formed by sedimenting insulation material between adjacent charge transfer electrodes to electrically separate the adjacent charge transfer electrodes, and a light reception part 101 is structured to have: a photoelectric conversion region 5 formed in the silicon substrate 1 to generate the signal charge by photo-electric conversion of incident light; and a thermal oxidation film 11 formed by thermal oxidation of a surface part of the photoelectric conversion region.