SEMICONDUCTOR STORAGE

PROBLEM TO BE SOLVED: To provide a magnetoresistive random access memory (MRAM) device capable of suppressing erroneous writing.SOLUTION: A pulse magnetic field is applied to a free layer of a tunnel magnetoresistive element by causing triangular-wave pulse current Iw to flow through a word line. The pulse magnetic field is also applied to the free layer by causing triangular-wave pulse current Ib that reaches a peak after the pulse current Iw reached the peak to flow through a bit line. The precession of magnetization vector of the free layer thereby becomes larger than the thermal fluctuation thereof, and a magnetization direction of the free layer can be prevented from being inverted by only the pulse current Iw. Furthermore, the magnetization direction of the free layer can be surely inverted by the pulse current Ib.