METHOD FOR PRODUCING HIGH-PURITY SILICON CARBIDE POWDER

METHOD FOR PRODUCING HIGH-PURITY SILICON CARBIDE POWDER

PROBLEM TO BE SOLVED: To provide a method for producing high-purity silicon carbide powder capable of producing high-purity silicon carbide powder inexpensively and safely in large quantities by using an Acheson furnace, and reducing power consumption in production of the high-purity silicon carbide...

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Bibliographische Detailangaben
Hauptverfasser: KONO TSUNEHEI, SUZUKI MASAKAZU, KUMASAKA JUN, ICHINOTSUBO YUKITERU, MASUDA KENTA
Format: Patent
Sprache:eng
Schlagworte:
CHEMISTRY
COMPOUNDS THEREOF
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method for producing high-purity silicon carbide powder capable of producing high-purity silicon carbide powder inexpensively and safely in large quantities by using an Acheson furnace, and reducing power consumption in production of the high-purity silicon carbide powder.SOLUTION: In this method for producing high-purity silicon carbide powder, particles comprising silica and carbon in which each of silica and carbon is distributed all around in particles and each content rate of B and P is ≤1 ppm are heated by using an Acheson furnace, to thereby obtain high-purity silicon carbide powder. Preferably, in the particle comprising silica and carbon, the content rate of silica is ≤90 mass% and the content rate of carbon is ≥10 mass% at every spot in the particle.