VAPOR PHASE GROWTH APPARATUS

PROBLEM TO BE SOLVED: To rotate a susceptor which is stably supported while equalizing the in-plane temperature distribution of the susceptor.SOLUTION: A vapor phase growth apparatus includes: a deposition chamber 1; a shower head 20 supplying a material gas for deposition to the deposition chamber...

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1. Verfasser: OKADA TOSHINORI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To rotate a susceptor which is stably supported while equalizing the in-plane temperature distribution of the susceptor.SOLUTION: A vapor phase growth apparatus includes: a deposition chamber 1; a shower head 20 supplying a material gas for deposition to the deposition chamber 1; and a heater 6 heating a processed substrate 3 in the deposition chamber 1. Further, the vapor phase growth apparatus includes: a rotary susceptor 4 where the processed substrate 3 is placed in the deposition chamber 1; a support part 11 supporting an edge of the susceptor 4 from below through a heat insulation member 12; and a rotation shaft 5 transmitting a rotation force to the susceptor 4. The rotation shaft 5 has a protruding part at a position offset from a center axis of the rotation shaft 5 in an end part at the susceptor 4 side. The susceptor 4 has a recessed part, to which the protruding part is loosely inserted, on a lower surface.